This (Al, Ga, In)N ultraviolet light-emitting diode (UVLED) includes a UV-transparent contact, which significantly enhances the light extraction and quantum efficiency of these devices. This technology also eliminates mirrors and/or mirrored surfaces in order to reduce internal reflections and minimize light re-absorption by the emitting layer.
Primary Application Area: Energy, Infrastructure, Resilience
Technology Development Status: Concept
Technology Readiness Level: TRL 2
Organization Type: Academic/Gov Lab
GOVT/EXTERNAL FUNDING SOURCES
External Funding to Date: UC Santa Barbara Solid State Lighting & Energy Electronics Center (SSLEEC)