M. Schroeder
Leibniz Institute for Crystal Growth, Berlin, Germany
Keywords: wide bandgap semiconductors, Ga2O3, AlN, material research and development
The Leibniz Institute for Crystal Growth (IKZ) is a leader in research and development of advanced crystalline materials, specializing in semiconductors, laser materials, quantum computing materials, and ultrawide bandgap (UWBG) semiconductors like aluminum nitride (AlN) and gallium oxide (Ga₂O₃). These materials are vital for next-generation defense technologies demanding high performance and resilience in extreme conditions. AlN and Ga₂O₃ are standout UWBG materials, offering advancements in high-power and high-temperature applications. AlN's excellent thermal conductivity, electrical insulation, and durability make it ideal for power electronics, RF devices, and heat management systems. Its reliability in hostile environments supports applications in radar, satellite communications, and aerospace. Ga₂O₃, with its 4.8 eV bandgap, provides superior breakdown voltage and efficiency for power conversion. This makes it a critical component for high-voltage electronics, such as power converters and flame detection systems in military aircraft. IKZ is already offering AlN bulk substrates and Ga₂O₃ bulk and epiwafers with a roadmap to 4 inch wafers, strengthening its contribution to advanced defense technology. In addition, with its Center for Laser Materials, the institute is active in development of crystalline oxides and fluorides for laser technology. We also offer development of crystalline materials tailored to customer requirements.